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等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學(xué)LIU HuanNanjing University

無等離子體損傷GaN HEMT極化隔離的設(shè)計(jì)與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學(xué)院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

SiC等離子體波脈沖功率器件與應(yīng)用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孫樂嘉西安電子科技大學(xué)副教授SUN LejiaAssociate Professor of Xidian University

等離子刻蝕技術(shù)在第三代化合物半導(dǎo)體領(lǐng)域的應(yīng)用Application of Plasma Etching Technology in the Third-generation Compound Semiconductor Field謝秋實(shí)北京北方華創(chuàng)微電子裝備有限公司 第一刻蝕事業(yè)部副總經(jīng)理XIE QiushiDeputy General Manager of NAURA Technology Group Co., Ltd.

《等離子體密度對ICP-MOCVD生長GaN薄膜的影響》作者：余佳東，羅毅，王健，張子軒，李翔，汪萊，郝智彪單位：北京信息科學(xué)與技術(shù)