碳化硅生長和襯底建模以及基于MOVPE技術的氮化鎵生長模擬 Modeling of SiC crystal growth and epitaxy and simulation of GaN metal Organic Vapor DepositionAndrey SMIRNOV俄羅斯STR Group, Inc.資深研發工程師 Andrey SMIRNOVSenior Research Engineer of STR Group, Inc., Russia
藍寶石基B0.375GaN/B0.45GaN量子阱結構的激光二極管中n-p電極對于p型電導率的影響 The effect of n-p electrodes upon the p-type conductivity of B0.375GaN/B0.45GaN QW/QB edge emitting laser diode grown over sapphire substrateMussaab I. NIASS鄭州大學 Mussaab I. NIASSZhengzhou University
報告簡介：基于深層瞬態光譜學的Al/Ti 4H-SiC肖特基結構缺陷研究 Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures byDeep Level Transient Spectroscopy何亞偉 中國科學院半導體研究所 HE Yawei Institute of Semiconductors, Chinese Academy of Sciences
