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高功率寬禁帶半導體射頻器件研究進展Research Progress of High Power Wide Band-gap Semiconductor RF Devices張進成西安電子科技大學副校長、教授ZHANG JinchengVice PresidentProfessor of Xidian University

融通半導體產業鏈 構建應用創新生態圈Integrate Semiconductor Industry Chain to Build Application Innovation Ecosystem李虹華潤微電子有限公司總裁LI HongPresident of China Resources Microelectronics Limited

最新高性能SiC MOSFET技術助力未來SiC市場的發展趨勢The Latest High Performance SiC MOSFET Technology Trend for Future SiC Market Development濱田公守日本華為股份有限公司高級首席專家Kimimori HAMADASenior Chief Expert Huawei Technologies Japan

基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

加快碳化硅芯片和電力電子器件的商業化發展Accelerating Commercialization of SiC Chips and Power ElectronicsVictor VELIADIS美國PowerAmerica執行董事兼CTO、ICSCRM 2024 大會主席、北卡羅萊納州立大學教授、IEEE寬禁帶功率半導體技術路線圖委員會(ITRW)主席Victor VELIADISExecutiveDirector and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State Universityand Chair of ITRW ( IEEE Wide Ban

2024中國第三代半導體技術十大進展/ 2024 China's Top 10 Advances in Wide Band-gap Semiconductor Technology

半導體材料產業的現狀和挑戰Status and Challenge of Semiconductor Material Industry楊德仁中國科學院院士、浙大寧波理工學院校長、浙江大學硅及先進半導體材料全國重點實驗室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

面向SiC功率器件的裝備與工藝解決方案NAURA Solutions for SiC Power Devices張軼銘北京北方華創微電子裝備有限公司Zhang YimingBeijing NAURA Microelectronics Equipment Co.,Ltd

大直徑碳化硅外延市場發展與挑戰Development and Challenges of Large Diameter Silicon Carbide Epitaxial張國良河北普興電子科技股份有限公司市場總監ZHANG GuoliangMarketing Director of Hebei Pushing Electronic Technology Co., LTD

碳化硅單晶缺陷研究及產業化進展Research and Industrialization Progress of SiC Single Crystal Defects陳秀芳山東大學教授、南砂晶圓董事CHEN XiufangProfessor of Shandong University, Board Director of Guangzhou Summit Crystal Semiconductor Co.,Ltd

提拉式物理氣相傳輸法制備碳化硅單晶Single-crystal 4H Silicon Carbide Grown with the Method of Pulling Physical Vapor Transport皮孝東浙江大學教授PI XiaodongProfessor of Zhejiang University

化合物半導體外延大規模量產解決方案High Volume Manufacturing of Compound Semiconductors Epitaxy方子文AIXTRON中國總經理FANG ZiwenGM of AIXTRON China

SiC單晶的坩堝結構及PVT生長工藝條件的改進SiC Single Crystals with Modification of Crucible Structure and Process Condition for PVT GrowthWon-Jae LEE韓國東義大學教授、釜山電力半導體研究所所長Won-JaeLEEProfessor of Dong-Eui University,Director of Busan Power Semiconductor Lab.

硅晶圓廠中的SiC制造SiC Fabrication in a Silicon FabVictor VELIADIS美國電力執行董事 CTO、ICSCRM2024大會主席、北卡羅來納州立大學教授、IEEE寬禁帶功率半導體技術路線圖委員會(ITRW)主席Victor VELIADISExecutive Director and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State University and Chair of ITRW

AlN基高壓高頻功率器件研究進展及挑戰Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安電子科技大學教授ZHOUHongProfessor at Xidian University

GaN基光電材料外延與MOCVD反應腔結構關聯性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯合創始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學LIU HuanNanjing University

用于氮化鎵異質外延的高溫PVD氮化鋁緩沖層技術High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

6英寸復合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute