雙閾值耦合AlGaN/GaN HEMT中用于優化Ka波段高電場線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學Wang PengfeiXidian University
電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亞麥考瑞大學教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
無等離子體損傷GaN HEMT極化隔離的設計與優化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學院寧波材料技術與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國科學院蘇州納米技術與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
AlGaN/GaN HEMT能帶工程和界面調制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛國中國科學院北京納米能源與系統研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
p-GaN Gate HEMT器件閾值穩定性及其機理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學博士ZHOU QiProfessor of University of Electronic Science and Technology of China
GaN HEMT與SIC MOSFET在戶用儲能PCS方向應用優勢Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令濤--南京芯干線科技有限公司市場總監
用于高效能量轉換應用的GaN HEMT的深能級效應和可靠性Deep level effects and reliability of GaN HEMTs for high efficiency energy conversion applicationsEnrico Zanoni意大利帕多瓦大學信息工程系教授Enrico ZanoniProfessor of Dipartimento di Ingegneria dellInformazioneUniversit di Padova
