用于高效能量轉換應用的GaN HEMT的深能級效應和可靠性Deep level effects and reliability of GaN HEMTs for high efficiency energy conversion applicationsEnrico Zanoni意大利帕多瓦大學信息工程系教授Enrico ZanoniProfessor of Dipartimento di Ingegneria dellInformazioneUniversit di Padova
高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導體研究院研發部負責人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors
AlGaN基低維量子結構外延和電導率調控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures許福軍北京大學物理學院副教授Xu Fujun - Associate Professor, Peking University
利用AlN傳導層在GaN襯底上外延生長金剛石薄膜及其熱傳輸特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本國立物質材料研究所獨立研究員SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
應用于垂直器件的高電導率GaN單晶襯底制HVPE Growth of Bulk GaN with High Conductivity for Vertical Devices王建峰蘇州納維科技有限公司總經理WANG JianfengGeneral Manager of Suzhou Nanowin Science and Technology Co., Ltd
OMMIC公司董事長、巴黎高等電子研究所終身教授Marc Christian ROCCHI（四川益豐基礎研發部部長王祁鈺代講）介紹了《100nm and 60 nm Si 上GaN MMIC工藝和產品》主題報告，報告中將首先從射頻性能和可靠性的角度來綜述GaN on Si工藝。檢查各種10W功率放大器在30GHz和39GHz的性能，PAE高達35%，增益23 dB。從20到34 GHz有20dB增益和1.5 dB NF的寬帶LNAs。用30GHz 5W和2.7dB NF T/R芯片以及600mW 90GHz功率放大器來演示這些工藝的性能
