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中科重儀半導(dǎo)體聯(lián)合創(chuàng)
2340
中科重儀半導(dǎo)體聯(lián)合創(chuàng)
GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國(guó)科學(xué)院半導(dǎo)體研究所副研究員、中科重儀半導(dǎo)體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.
23400
IFWS2025-01-09 14:42
中科院蘇州納米所研究
5770
中科院蘇州納米所研究
硅襯底GaN基光電材料外延生長(zhǎng)Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
57700
IFWS2025-01-09 14:41
中電科第十三所高級(jí)工
3240
中電科第十三所高級(jí)工
6英寸復(fù)合襯底上厚GaN外延生長(zhǎng)研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國(guó)電子科技集團(tuán)第十三所高級(jí)工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute
32400
IFWS2025-01-09 14:27
西安電子科技大學(xué)王鵬
9610
西安電子科技大學(xué)王鵬
雙閾值耦合AlGaN/GaN HEMT中用于優(yōu)化Ka波段高電場(chǎng)線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學(xué)Wang PengfeiXidian University
96100
guansheng2023-05-22 15:22
山東大學(xué)新一代半導(dǎo)體
11090
山東大學(xué)新一代半導(dǎo)體
電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學(xué)新一代半導(dǎo)體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
110900
guansheng2023-05-22 15:20
復(fù)旦大學(xué)教授黃偉：寬
9380
復(fù)旦大學(xué)教授黃偉：寬
寬帶GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黃偉復(fù)旦大學(xué)教授HUANG WeiProfessor of Fudan University
93800
guansheng2023-05-22 15:16
澳大利亞麥考瑞大學(xué)教
7810
澳大利亞麥考瑞大學(xué)教
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亞麥考瑞大學(xué)教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
78100
guansheng2023-05-22 15:14
西交利物浦大學(xué)朱昱豪
7200
西交利物浦大學(xué)朱昱豪
35-5V單片集成GaN基DC-DC浮動(dòng)降壓轉(zhuǎn)換器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大學(xué)ZHU YuhaoXi'an Jiaotong-Liverpool University
72000
guansheng2023-05-22 15:14
中科院寧波材料所戴貽
6950
中科院寧波材料所戴貽
無(wú)等離子體損傷GaN HEMT極化隔離的設(shè)計(jì)與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國(guó)科學(xué)院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
69500
guansheng2023-05-22 15:13
中科院蘇州納米所助理
7640
中科院蘇州納米所助理
功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
76400
guansheng2023-05-22 15:12
中國(guó)科學(xué)院北京納米能
10560
中國(guó)科學(xué)院北京納米能
AlGaN/GaN HEMT能帶工程和界面調(diào)制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛(wèi)國(guó)中國(guó)科學(xué)院北京納米能源與系統(tǒng)研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
105600
guansheng2023-05-22 15:02
電子科技大學(xué)博士陳匡
8050
電子科技大學(xué)博士陳匡
p-GaN Gate HEMT器件閾值穩(wěn)定性及其機(jī)理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學(xué)博士ZHOU QiProfessor of University of Electronic Science and Technology of China
80500
guansheng2023-05-22 15:02
加拿大滑鐵盧大學(xué)副教
9160
加拿大滑鐵盧大學(xué)副教
RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑鐵盧大學(xué)副教授Lan WEIAssociate Professor of University of Waterloo, Canada
91600
guansheng2023-05-22 14:59
南方科技大學(xué)深港微電
10670
南方科技大學(xué)深港微電
Si基GaN器件及系統(tǒng)研究與產(chǎn)業(yè)前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大學(xué)深港微電子學(xué)院院長(zhǎng)、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology
106700
guansheng2023-05-22 14:57
瑞士洛桑聯(lián)邦理工學(xué)院
12390
瑞士洛桑聯(lián)邦理工學(xué)院
New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑聯(lián)邦理工學(xué)院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss
123900
guansheng2023-05-22 14:56
芯干線市場(chǎng)總監(jiān)孔令濤
6840
芯干線市場(chǎng)總監(jiān)孔令濤
GaN HEMT與SIC MOSFET在戶用儲(chǔ)能PCS方向應(yīng)用優(yōu)勢(shì)Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令濤--南京芯干線科技有限公司市場(chǎng)總監(jiān)
68400
guansheng2023-05-22 13:54
河北工業(yè)大學(xué)教授張紫
8180
河北工業(yè)大學(xué)教授張紫
GaN半導(dǎo)體垂直腔面激光器的仿真設(shè)計(jì)與分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser張紫輝河北工業(yè)大學(xué)教授ZHANG ZihuiProfessor of Hebei University of Technology
81800
guansheng2023-05-22 13:32
廈門大學(xué)助理教授梅洋
6770
廈門大學(xué)助理教授梅洋
GaN基微腔激光器的制備Fabrication of GaN based micro-cavity lasers梅洋廈門大學(xué)助理教授MEI YangAssistant Professor of Xiamen University
67700
guansheng2023-05-22 11:20
日本名城大學(xué)教授Tets
8810
日本名城大學(xué)教授Tets
Status and Prospects of GaN-based vertical-cavity surface-emitting lasersTetsuya TAKEUCHI日本名城大學(xué)教授Tetsuya TAKEUCHIProfessor of Meijo University,Japan
88100
guansheng2023-05-22 10:36
北京衛(wèi)星制造廠有限公
6360
北京衛(wèi)星制造廠有限公
GaN/SiC功率器件在航天電源的應(yīng)用前景Application prospect of GaN/SiC power devices in aerospace power supply萬(wàn)成安北京衛(wèi)星制造廠有限公司領(lǐng)域總師WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd
63600
guansheng2023-05-19 09:08

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