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北京大學(xué)理學(xué)部副主任
32410
北京大學(xué)理學(xué)部副主任
基于大失配外延的氮化物第三代半導(dǎo)體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學(xué)理學(xué)部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University
324100
IFWS2025-01-09 15:42
西安電子科技大學(xué)教授
5600
西安電子科技大學(xué)教授
AlN基高壓高頻功率器件研究進展及挑戰(zhàn)Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安電子科技大學(xué)教授ZHOUHongProfessor at Xidian University
56000
IFWS2025-01-09 14:43
中科重儀半導(dǎo)體聯(lián)合創(chuàng)
2340
中科重儀半導(dǎo)體聯(lián)合創(chuàng)
GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學(xué)院半導(dǎo)體研究所副研究員、中科重儀半導(dǎo)體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.
23400
IFWS2025-01-09 14:42
中科院蘇州納米所研究
5730
中科院蘇州納米所研究
硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
57300
IFWS2025-01-09 14:41
日本NTT基礎(chǔ)研究實驗
4560
日本NTT基礎(chǔ)研究實驗
氮化鋁基半導(dǎo)體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎(chǔ)研究實驗室負(fù)責(zé)人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation
45600
IFWS2025-01-09 14:25
思體爾總經(jīng)理LAMBRINA
12110
思體爾總經(jīng)理LAMBRINA
基于量產(chǎn)的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經(jīng)理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.
121100
IFWS2025-01-09 14:20
皇家墨爾本大學(xué)微納研
4440
皇家墨爾本大學(xué)微納研
基于液態(tài)金屬打印和飛秒激光照射的高性能原子薄Ga2O3氣體傳感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龍皇家墨爾本大學(xué)微納研究院研究員XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University
44400
IFWS2025-01-09 13:57
山東大學(xué)新一代半導(dǎo)體
11080
山東大學(xué)新一代半導(dǎo)體
電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學(xué)新一代半導(dǎo)體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
110800
guansheng2023-05-22 15:20
南京理工大學(xué)副教授黃
11150
南京理工大學(xué)副教授黃
28GHz氮化鎵基時間調(diào)制波束成形系統(tǒng)28GHz GaN based time modulated beamforming system黃同德南京理工大學(xué)副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology
111500
guansheng2023-05-22 15:18
西交利物浦大學(xué)朱昱豪
7200
西交利物浦大學(xué)朱昱豪
35-5V單片集成GaN基DC-DC浮動降壓轉(zhuǎn)換器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大學(xué)ZHU YuhaoXi'an Jiaotong-Liverpool University
72000
guansheng2023-05-22 15:14
南方科技大學(xué)深港微電
10670
南方科技大學(xué)深港微電
Si基GaN器件及系統(tǒng)研究與產(chǎn)業(yè)前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大學(xué)深港微電子學(xué)院院長、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology
106700
guansheng2023-05-22 14:57
瞻芯電子市場經(jīng)理林其
7660
瞻芯電子市場經(jīng)理林其
基于SiC的車載功率轉(zhuǎn)換解決方案SiC-based automotive power conversion solutions林其鋒上海瞻芯電子科技有限公司市場經(jīng)理
76600
guansheng2023-05-22 14:28
國家新能源汽車技術(shù)創(chuàng)
10500
國家新能源汽車技術(shù)創(chuàng)
基于SiC功率芯片的高功率密度電驅(qū)系統(tǒng)High power density electric drive system based on SiC power chip劉朝輝國家新能源汽車技術(shù)創(chuàng)新中心總師LIU ChaohuiChief Engineer of National New Energy Automobile Technology Innovation Center
105000
guansheng2023-05-22 14:24
賀利氏電子中國區(qū)研發(fā)
5650
賀利氏電子中國區(qū)研發(fā)
Condura.ultraTM無銀AMB氮化硅基板---車規(guī)級功率模塊用高性價比解決方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module張靖賀利氏電子中國區(qū)研發(fā)總監(jiān)ZHANG JingDirector of Innovation China, Heraeus Electronics
56500
guansheng2023-05-22 13:55
博睿光電副總經(jīng)理梁超
8020
博睿光電副總經(jīng)理梁超
面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江蘇博睿光電股份有限公司副總經(jīng)理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd
80200
guansheng2023-05-22 13:51
廈門大學(xué)助理教授梅洋
6770
廈門大學(xué)助理教授梅洋
GaN基微腔激光器的制備Fabrication of GaN based micro-cavity lasers梅洋廈門大學(xué)助理教授MEI YangAssistant Professor of Xiamen University
67700
guansheng2023-05-22 11:20
中電科十三所基礎(chǔ)研究
13050
中電科十三所基礎(chǔ)研究
使用MOCVD生長的QCL激光器Epitaxy of mid- infrared quantum cascade lasers fully by MOCVD房玉龍中電科十三所基礎(chǔ)研究部主任FANG YulongHebei Semiconductor Institute
130500
guansheng2023-05-22 10:25
中國科學(xué)院蘇州納米所
9880
中國科學(xué)院蘇州納米所
氮化鎵基激光器和超輻射管研究進展Progress of GaN based laser diodes and superluminescene diodes劉建平中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所納米器件研究部研究員LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences
98800
guansheng2023-05-22 10:07
波蘭高壓物理研究所研
5550
波蘭高壓物理研究所研
基于藍光半導(dǎo)體激光器的新器件：SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波蘭高壓物理研究所研究員Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland
55500
guansheng2023-05-22 09:56
中國科學(xué)技術(shù)大學(xué)周凱
9920
中國科學(xué)技術(shù)大學(xué)周凱
基于表面電位的-Ga2O3功率MOSFET緊湊模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凱中國科學(xué)技術(shù)大學(xué)ZHOU KaiChina University of Science and Technology
99200
guansheng2023-05-19 14:49

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