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面向的Ga2O3功率器件應用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

氧化鎵中缺陷擴展及模型Defect Expansion and Model in Gallium Oxide張赫之大連理工大學副教授ZHANG HezhiAssociate Professor, Dalian University of Technology

28GHz氮化鎵基時間調制波束成形系統28GHz GaN based time modulated beamforming system黃同德南京理工大學副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑鐵盧大學副教授Lan WEIAssociate Professor of University of Waterloo, Canada

SiC等離子體波脈沖功率器件與應用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孫樂嘉西安電子科技大學副教授SUN LejiaAssociate Professor of Xidian University

橫向和縱向-Ga2O3功率MOSFET的十年進展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黃文海香港科技大學副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology

-Ga2O3單晶的體晶生長與性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山東大學副教授MU WenxiangAssociate Professor of Shandong University

金剛石深紫外光電探測器研究Deep ultraviolet photodetectors based on diamond楊珣鄭州大學副教授YANG XunProfessor of Zhengzhou University

利用高Al組分-(AlGa)2O3緩沖層在藍寶石襯底上優化生長高質量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學副教授ZHANG HezhiAssociate professor of Dalian University of Technology

基于氮化鎵的CRM圖騰柱PFC整流器的無傳感器電流過零檢測技術王浩宇上海科技大學信息學院長聘副教授、研究員WANG HaoyuAssociate Professor of ShanghaiTech University

AlGaN基低維量子結構外延和電導率調控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures許福軍北京大學物理學院副教授Xu Fujun - Associate Professor, Peking University

Adding efficiency to electronics with III-Nitride technologySrabanti CHOWDHURY美國斯坦福大學電氣工程副教授Srabanti CHOWDHURYAssociate Professor of Electrical Engineering and Senior Fellow at the Precourt Institute for Energy, USA

日本名城大學副教授Motoaki IWAYA 帶來了關于基于AlGaN 激光的發展現狀的報告。

報告簡介單晶4H型碳化硅臺階生長機理 The step growth mechanism for 4H-SiC with Improved Single Polytypes林偉廈門大學副教授 LINWeiAssociate Professor of Xiamen University

西安交通大學副教授李強做了題為射頻濺射技術制備h-BN薄膜的制作與應用的主題報告，分享了濺射制備的hBN膜,包括工藝條件的選擇，hBN的性質，以及hBN膜的應用，包括電阻開關行為等內容。 報告指出，所制備的hBN膜可以在大面積上獲得良好的光滑度。由BN和BAlN薄膜組成的DBR可以在UVA波段實現高反射。首先在Ag / hBN / Al結構中觀察到通過濺射制備的hBN膜的RS行為。摻鋁氮化硼薄膜的RS窗口明顯增加。